Applied Physics Letters · 1998 · 152 citations · 10 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsFerromagnetic MaterialsFerromagnetismMagnetic Properties Of SolidsSemiconductor HeterostructuresSemiconductor PhysicsSpintronicsFerromagnetic SemiconductorsResonant TunnelingResonant Tunneling DevicesSplittingTemperature DependenceTunneling DiodesValence BandValence Band Structure
Current–voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Ga, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
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