Applied Physics Letters · 1985 · 201 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsQuantum TunnelingSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCarrier Tunneling Across InterfacesCurrent-voltage RelationsDirect TunnelingResonant TunnelingTunneling CurrentTunneling In NanostructuresTunneling In SemiconductorsTunneling Phenomena
We have observed resonant tunneling of holes through double-barrier AlAs-GaAs-AlAs structures sandwiched between p+-GaAs regions. The resonances appeared as negative resistance regions in the current-voltage characteristics perpendicular to the interface planes. A set of resonant structures was already visible at high temperatures (T≂250 K) while an additional set was observable only at low temperatures (T≤100 K). Although in principle the sets can be attributed to tunneling of light and heavy holes, respectively, an analysis of the number and relative voltage position of the resonances suggests that considerable band mixing occurs. The application of a strong magnetic field, parallel to the tunneling current, introduced shifts in the resonances which support that interpretation.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald et al. · Applied Physics Letters · 1983 · 1.1K citations · Full text