A monolithic zinc-oxide–on–silicon <i>p</i>-<i>n</i>-diode storage correlator

Abstract

A monolithic zinc-oxide–on–silicon p-n storage correlator has been constructed. When operated both as a convolver and as a storage correlator, the electronic efficiency obtained with this device is comparable to that of the present LiNbO3 airgap devices. This device has the potential of having very large dynamic range because of the absence of spurious bulk-wave generation, as occurs in the airgap device. Several signal-processing functions have been demonstrated with this new type of storage correlator. In one chirp correlation experiment, correlation of signals with a time-bandwith product of 4000 has been observed.