High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors

Abstract

A p-channel quantum-well InGaAs/AlGaAs modulation-doped field effect transistor has been fabricated. With a 1-µm gate, the device exhibits transconductances of 17.8 and 89 mS/mm at room temperature and 77 K, respectively. Experimental results indicate an extrinsic transconductance greater than 200 mS/mm is achievable with reduced ohmic contact resistance and gate leakage.