Erbium-doped GaAs light-emitting diode at 1.54 μm

Abstract

Erbium doped GaAs light-emitting diodes have been fabricated from molecular beam epitaxial GaAs layers. Electroluminescence spectra were recorded at 77 K and at 300 K; two emission bands were observed at these temperatures: the GaAs band-edge emission centred at around 0.9 μm and the Er related emission centred at 1.54 μm. The variation of the electroluminescence intensities of each emission with current density is presented.