Quantitative surface profilimetry applied to sputter ion bombarded sapphire

Abstract

A Dektak surface profilimeter has been interfaced with a PDP8/e minicomputer, surface profiles digitally recorded, and the data subsequently numerically manipulated. Programs were written to calculate hav, hrms, and rf. Comparison of these values to roughness standards traceable to NBS verified the validity of the interfacing and subsequent data processing. Average roughness had a limit of sensitivity of 5 Å (signal/noise = 1). Preliminary studies using the technique to study the effects of 500 eV argon ion sputter bombardment have begun. Three orientations (112̄0), (1̄012), and (0001) of sapphire were studied. Slight differences were observed between the two slip planes (112̄0), (0001), and the cleavage plane (1̄012).