2013 · 29 citations · 6 references
EngineeringAerospace EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDc-dc ConversionDc-dc ConvertersDevice CharacterizationWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsIsolated Dc-dc ConverterPower Electronics DevicesSilicon CarbideSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsSwitching LossesTransistors For Power ConversionWide Bandgap Semiconductor Converters
This paper describes a method which precisely estimates switching losses of fast power semiconductors. In this method, no transistor current is measured and, consequently the switching behavior of the transistor is not changed by the measurement system. By two different measurement modes, turn-off and turn-on losses can be estimated separately, which is necessary to precisely design isolated DC/DC converters used in aircrafts. The proposed switching loss measurement method is explained and experimental results on Silicon Carbide MOSFETs verify its operation and accuracy.
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