Applied Physics Letters · 1966 · 48 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor LasersBand Gap EnergyEnergy Band GapEnergy Gap AnalysisSemiconductor Laser DiodesTemperature Dependence Of Laser Performance
Infrared laser emission at a number of wavelengths between 9.4 μ and 13.7 μ has been obtained from diodes of Pb1−ySnySe and Pb1−xSnxTe at 12°K and 77°K. Diodes were fabricated from vapor-grown Pb1−ySnySe and both vapor-grown and Bridgman-grown Pb1−xSnxTe. Emission data indicate that, as in Pb1−xSnxTe, the energy gap in Pb1−ySnySe decreases with increasing Sn concentration, becoming zero at 12°K for some value of y within the range 0.11 ≤ y ≤ 0.14.
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Physics of Quantum Electronics
Paul Kelley, B. Lax, P. E. Tannenwald · 1966 · 573 citations