Photoluminescence of GaSe

Abstract

Systematic photoluminescence measurements on p- and n-type GaSe crystals have been carried out in the temperature range from 4.2 °K up to room temperature. The main results are (all energies refer to 4.2 °K): a) direct free exciton emission at 2.109 eV; b) a structured emission localized between 2.103 and 2.060 eV attributed to excitons bound to neutral acceptors; and c) impurity states emission in the energy region between 2.057 and 1.904 eV.