Indirect Energy Gap in GaSe and GaS

E. Aulich, J. L. Brebner, E. Mooser

physica status solidi (b) · 1969 · 233 citations · 3 references

Concepts

Abstract

Abstract Optical absorption measurements on thick monocrystalline samples of GaSe 1− x S x show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 ≦ x ≦ 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. In the case of GaS the absorption spectra allow a tentative identification of the phonons involved in the indirect transition.

References

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