CH4/H2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors

Abstract

Pseudomorphic AlGaAs/InGaAs modulation doped field effect transistors have been fabricated by using methane/hydrogen (CH4/H2) reactive ion etching for gate recessing. Source-drain resistance and Hall measurements on as etched and annealed samples are presented. The electrical degradation introduced by the plasma can be recovered after annealing at 400 °C. A threshold voltage (Vth) standard deviation of 14 mV over a 5 cm (2 in.) wafer was obtained.