Lateral high-voltage devices using an optimized variational lateral doping

Abstract

Abstract A novel high-voltage generic power device structure based on an optimum variation in the lateral doping profile is proposed. The structure is implemented with a series of zones having piece-wise constant doping located in the field sustaining region of the device. The structure has been evaluated as an integrated component in a range of high-voltage devices, including MOST, JFET and BJT. The simulation results show the breakdown voltages achieved by the different structures can reach 85% of that, calculated for an equivalent parallel plane abrupt junction. The on-resistance of each device is very low while the switching speed is very high. Among these devices, the MOST shows the best improvement in performance. Since these lateral devices are compatible with modern sub-micrometre IC-technology, and are capable of self-isolation, they are very attractive for applications in HVIC and PIC processes.