M.S. Towers - Concepedia

Author

M.S. Towers

Swansea University

Also Known As

M Towers, M. S. TOWERS, M. S. Towers, M. Towers, M.S. Towers, Malcolm S Towers, Malcolm S. Towers, Michael Towers

Publications

547

Citations

H-Index

Concepts

All Affiliations

Swansea University University of Wales

About

M.S. Towers is an author at Swansea University specializing in engineering, electrical engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	18	349
2	Applied Physics	9	9	160
3	Computer Engineering	7	7	166
4	Natural Sciences	1	1	34
5	Chemistry	1	1	24

M.S. Towers

Publications

449

Citations

H-Index

Page 1

	Year	Citations
Physically based compact device models for circuit modelling applications Philip Mawby, Petar Igić, M.S. Towers Microelectronics Journal	2001	74
A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system Zhongfu Zhou, M.S. Khanniche, Petar Igić, Electrical EngineeringEngineeringPower DeviceEnergy ManagementEnergy Efficiency	2005	49
New physically-based PiN diode compact model for circuit modelling applications Petar Igić, S. Batcup, M.S. Towers, IEE Proceedings - Circuits Devices and Systems EngineeringPower ElectronicsCharge TransportSemiconductor DeviceCircuit System	2002	34
Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations Petar Igić, Philip Mawby, M.S. Towers, EngineeringPower DevicesPower CircuitPower ElectronicsCircuit Thermal Network	2002	27
A 2D physically based compact model for advanced power bipolar devices Petar Igić, M.S. Towers, Philip Mawby Microelectronics Journal	2004	26
An investigation of the diffusion of silicon in delta-doped gallium arsenide, as determined using high-resolution secondary ion mass spectrometry H.C. Nutt, Robin S. Smith, M.S. Towers, Journal of Applied Physics EngineeringChemistryChemical DepositionSilicon On InsulatorSemiconductors	1991	24
Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model Petar Igić, Philip Mawby, M.S. Towers, Microelectronics Reliability Device ModelingElectrical EngineeringEngineeringPower DeviceBias Temperature Instability	2002	23
Lateral high-voltage devices using an optimized variational lateral doping Xu-Yao Chen, Philip Mawby, C.A.T. Salama, International Journal of Electronics Low-power ElectronicsLateral DevicesElectrical EngineeringPiece-wise Constant DopingEngineering	1996	22
A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system Zhongfu Zhou, M.S. Khanniche, Petar Igić, International Journal of Numerical Modelling Electronic Networks Devices and Fields Electrical EngineeringEngineeringPower DeviceEnergy EfficiencyEnergy Management	2005	18
Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT) Petar Igić, Philip Mawby, M.S. Towers EngineeringPower ElectronicsThermodynamicsThermal ModelingElectronic Packaging	2002	18

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