A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers - Concepedia

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A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

12

Citations

22

References

2006

Year

Y. T. Moon, Jinqiao Xie, C. Liu, Y. Fu, X. Ni, K. J. Zhu, Feng Yun, H. Morkoç̌, Ashutosh Sagar, R. M. Feenstra

Journal of Crystal Growth

Overgrown Gan EpilayersGan Seed LayersAluminum Gallium NitrideApplied PhysicsGan Power Device

References

	Year	Citations

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