Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Abstract

As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.