Applied Physics Letters · 2012 · 61 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor DevicesAmorphous Electronic MaterialsAmorphous SemiconductorsAmorphous SolidsMemory DevicesMemristive MaterialsPhase ChangeAmorphous AlloysCrystallizationData RetentionMemory MaterialsPhase-change BehaviorPhase-change MemoryRandom Access Memory (Ram)Thermal Stability
The thermal stability of amorphous Sb2Te film can be significantly improved by the addition of Cu. CuSb4Te2 alloy is considered to be a potential candidate for phase change random access memory (PCRAM), as evidenced by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 7 ns for CuSb4Te2-based PCRAM cell. In addition, CuSb4Te2 shows endurance up to 1.5 × 105 cycles with a resistance ratio of about two orders of magnitude.
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Phase-change materials for rewriteable data storage
Matthias Wuttig, Noboru Yamada · Nature Materials · 2007 · 3.6K citations
H.‐S. Philip Wong, Simone Raoux, Sang‐Bum Kim et al. · Proceedings of the IEEE · 2010 · 1.8K citations