81.5–85.9 GHz injection-locked frequency divider in 65 nm CMOS

Abstract

An injection-locked frequency divider (ILFD) using the shunt-series inductive peaking technique is proposed. Fabricated in a 65 nm process, the proposed ILFD and a conventional one have the measured locking range of 81.5–85.9 and 71–77.4 GHz, respectively. Compared with the conventional ILFD, the measured free-running frequency of the proposed one is increased by 12.5%. Both ILFDs have core area of 0.036 mm2 and power of 12 mW for a 1.55 V supply without buffers.