Electrical Characteristics of Schottky Contacts on GaN and Al_0.11Ga_0.89N

Abstract

The electrical characteristics of Ag, Ti, Au, Pd and Ni Schottky contacts on GaN and Al 0.11 Ga 0.89 N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al 0.11 Ga 0.89 N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al 0.11 Ga 0.89 N Schottky contacts. The pinning degree of GaN and Al 0.11 Ga 0.89 N are much less than GaAs, Si and GaP, but both of them may be similar to CdS.