High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

Abstract

An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.