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Capacitance–voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidation

Materials ScienceEngineeringNanomaterialsNanoelectronicsNanotechnologySurface ScienceApplied PhysicsSemiconductor Device FabricationNanometer-scale Local OxidationCapacitance–voltage StudySingle-crystalline Si DotsSemiconductor Nanostructures