Japanese Journal of Applied Physics · 1992 · 12 citations · 1 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film DepositionThin-film MaterialsActivation EnergyConductivityConductivity In Thin FilmsGrain BoundariesSemiconductor ConductivitySputteringTemperature DependenceThin-film Semiconductors
Electrical conductivity on GaAs thin film deposited by RF sputtering was measured, and temperature dependence was analyzed. The film has very low conductivity in the range of 10 -4 Ω -1 cm -1 , and the activation energy of the conductivity is 0.67 eV. The conductivity is strongly limited by the high density of deep oxygen impurity as well as by grain boundaries.
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Electrical properties of polycrystalline GaAs films
J. J. Yang, P.D. Dapkus, Russell D. Dupuis et al. · Journal of Applied Physics · 1980 · 47 citations