Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System

Abstract

The high-resolution and high-aspect-ratio resist-patterning method using a trilayer-resist system with atomic force microscopy (AFM) lithography is described. This system consists of a high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic resist as a bottom layer. Since the bottom layer planarizes the surface, the patterns can be fabricated on a stepped surface. Using this method, we successfully fabricate 50-nm-wide and 340-nm-thick line-and-space resist patterns on a 200-nm-stepped substrate.