Applied Physics Letters · 2008 · 174 citations · 24 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDefect DensityExternal Quantum EfficiencyMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionOptical PropertiesPower OutputQuantum EfficiencyTemperature Dependence
We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7nm grown on low extended defect density semipolar (112¯2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200mA under pulsed operation (10% duty cycle) were 5.9mW, 13.4% and 29.2mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.
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