IEEE Electron Device Letters · 2011 · 21 citations · 11 references
EngineeringEmerging Memory TechnologyOptoelectronic DevicesPolymersSemiconductorsElectronic DevicesNanoelectronicsResistive Memory DevicesMemory DeviceMaterials ScienceElectrical EngineeringNanotechnologyElectronic MemoryAu NanoparticlesMicroelectronicsAu NpsElectronic MaterialsNanomaterialsPolymer ScienceApplied PhysicsStacking BilayerSemiconductor MemoryFunctional MaterialsOn/off-current Ratio
An ultrahigh ON/OFF-current ratio of 5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the ON/OFF-current ratio cannot be achieved by simply increasing the thickness of the PVK: Au NPs layer itself. This PVK:Au-NPs/PEDOT-PSS stacking-bilayer memory device also demonstrates good retention of high ON/OFF-current ratio for at least 2 h and remains programmable at 125°C.
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Organic Memory Device Fabricated Through Solution Processing
Jianyong Ouyang, Chih‐Wei Chu, Ricky J. Tseng et al. · Proceedings of the IEEE · 2005 · 107 citations