Optical investigation of carrier tunneling in semiconductor nanostructures

Abstract

The tunneling dynamics of excitons and free carriers in Al${}_{x}$Ga${}_{1\ensuremath{-}x}$As/GaAs asymmetric double quantum well and near-surface quantum well structures has been investigated by means of time-resolved optical techniques. The competing processes of carrier tunneling out of the quantum well and exciton formation and recombination inside the quantum well have been thoroughly studied in the range of the excitation densities relevant to device applications. A consistent picture capable of fully describing the carrier and exciton-tunneling mechanisms in both types of structures has been obtained and apparently contrasting results in the recent literature are clarified.