Publication | Closed Access
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
26
Citations
46
References
2013
Year
Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorSelf-heating Effects
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