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Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures
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2011
Year
Carrier DistributionEngineeringOptoelectronic DevicesLuminescence PropertySemiconductorsDifferent TemperaturesLight-emitting DiodesCompound SemiconductorQuantum SciencePhotonicsPhotoluminescencePhysicsQuantum DeviceOptoelectronic MaterialsNew Lighting TechnologyCyan QwWhite OledRoom TemperatureSolid-state LightingApplied PhysicsOptoelectronics
Abstract We investigate colour‐coded InGaN‐based light‐emitting diodes (LEDs) where the position of a cyan‐emitting quantum well (QW) embedded into a blue‐emitting active region was varied systematically. The intensity ratio between the light output originating from the cyan and the blue QWs for different temperatures is analyzed both under electroluminescence (EL) and photoluminescence (PL) conditions. In EL, the contribution of the cyan QW increases when its position draws nearer to the p‐side. Surprisingly, a similar behaviour is also observed under PL excitation. Clear evidence of limited multi‐quantum‐well (MQW) operation at room temperature is found by comparing the relative emission intensities for different temperatures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)