New Theoretical Method for Strongly Correlated Random Systems and Application to Anderson-Localized States in Si:P

Abstract

A new theoretical method of the multi-configuration self-consistent field type is proposed to treat the Anderson-localized states in strongly correlated disordered systems. Performing a cluster simulation for a Si:P system below the critical concentration, we find that most of the electrons form spin-singlet pairs and the remaining bonds are related to spin-triplet pairs. The nature of the metal-insulator transition is reflected by a single Slater determinant constructed from extended one-electron orbitals.