High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications

Abstract

In spite of the successful achievement of oxide-semiconductor (OS) technology in recent years, stability degradation especially at high mobility regime limits the application of oxide semiconductors in next generation displays. According to previous works, the instability is closely related to oxygen vacancies (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</inf> ) causing persistent photoconductivity (PPC) [1,2]. From this point of view, zinc oxynitride (ZnON)[3] with small bandgap (1.3 eV) and high intrinsic mobility is attractive to overcome the performance issues of OS. In this paper, we report on ZnON-thin film transistors (TFTs) with field effect mobility near 100 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs and operation stability(< 3 V) under light-illumination bias-stress. Our results demonstrate that ZnON-TFTs are strong candidates for pixel switching devices in ultra-high definition and large area displays.