The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon

Abstract

The rate of cw laser induced solid phase epitaxy in self-implantation amorphized silicon has been measured by determining the dwell time required to regrow the entire amorphous layer at the center of a scanned laser beam. The measurement was performed in the annealing temperature range of 800–900 °C. The measured regrowth rates were about two orders of magnitude higher than those extrapolated from low-temperature furnace annealing data.