Atomic-Layer Chemical-Vapor-Deposition of SiO₂ by Cyclic Exposures of CH₃OSi(NCO)₃ and H₂O₂

Abstract

Atomic-layer chemical-vapor-deposition (AL-CVD) of SiO 2 has been achieved by cyclic exposures of CH 3 OSi(NCO) 3 and H 2 O 2 at room temperature. The deposition rate was saturated at about 2.0 Å/cycle i.e., equal to the ideal quasi-monolayer/cycle. The surface roughness after 100 deposition cycles was found to be less than ±10 Å by atomic force microscopy (AFM). Film properties were also evaluated by auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS), and Fourier transform IR (FT-IR) spectroscopy.