Physical Review Letters · 1985 · 187 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsCrystal StructureSurface ScienceQuantum TunnelingStacking FaultsSurface CrystallographyTunnelingStacking Fault EffectsStacking Fault FormationStacking Faults In SemiconductorsStep EdgesSurface StepsSurface TerracesTerrace StructureTunneling Phenomena
Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. The 7\ifmmode\times\else\texttimes\fi{}7 reconstruction is observed to persist essentially undistorted right up to the steps. The position of each step coincides with a 7\ifmmode\times\else\texttimes\fi{}7 unit-mesh edge in both the upper and lower terraces adjacent to it. Asymmetry within the 7\ifmmode\times\else\texttimes\fi{}7 unit mesh is observed and correlated with faulting of terraces adjacent to the step. The results are described by an extension of the dimer adatom stacking-fault model of Takayanagi et al.
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7 × 7 Reconstruction on Si(111) Resolved in Real Space
G. Binnig, H. Rohrer, Ch. Gerber et al. · Physical Review Letters · 1983 · 1.9K citations · Full text