Concepedia

Direct modulation of semiconductor lasers at f&gt;10 GHz by low-temperature operation

Applied Physics Letters · 1984 · 30 citations · 5 references

Open access

Abstract

Using a 175-μm-long buried-heterostructure laser fabricated on a semi-insulating substrate operating at −50 °C, a direct amplitude modulation bandwidth in excess of 10 GHz has been achieved.

References

5

Heterostructure Lasers

H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations

Engineering, Electrical Engineering, Materials Science +17

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Kam Y. Lau, N. Bar-Chaim, I. Ury et al. · Applied Physics Letters · 1983 · 140 citations · Full text

Engineering, Electrical Engineering, Physics +17

High-frequency characteristics of GaAlAs injection lasers

L. Figueroa, Charles Slayman, Huan-Wun Yen · IEEE Journal of Quantum Electronics · 1982 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Buried heterostructure AlGaAs lasers on semi-insulating substrates

N. Bar-Chaim, J. Katz, I. Ury et al. · Electronics Letters · 1981 · 22 citations

Engineering, Electrical Engineering, Optoelectronics +15

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

N. Bar-Chaim, Kam Y. Lau, I. Ury et al. · Applied Physics Letters · 1983 · 20 citations

Engineering, Electrical Engineering, Materials Science +14

Direct modulation of semiconductor lasers at <i>f</i>&gt;10 GHz by low-temperature operation

Concepts

Abstract

References

Direct modulation of semiconductor lasers at <i>f</i>&amp;gt;10 GHz by low-temperature operation

Concepts

Abstract

References

Direct modulation of semiconductor lasers at <i>f</i>>10 GHz by low-temperature operation