Preparation of MgIn₂O_4-X Thin Films on Glass Substrate by RF Sputtering

Abstract

MgIn 2 O 4- X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H 2 flow was 2.3×10 2 S/cm, with a carrier concentration of 6.3×10 20 cm -3 and a mobility of 2.2 cm 2 ·V -1 ·s -1 . No distinct optical absorption band was observed in the visible region.