Intrinsic and extrinsic capacitances of in-plane-gated transistors

Abstract

The intrinsic and extrinsic capacitances of in-plane-gated (IPG) transistors are calculated by conformal mapping. The capacitance per unit length between coplanar areas is only weakly dependent on the separation. It is essentially determined by the dielectric constant only and has a value of ∼18 pF/m in air. In both ion-implanted and trench-etched IPG transistors the geometry is of minor importance for the low- and high-frequency behavior.