Physical Review Letters · 1984 · 274 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsCarrier TransportOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsCarrier ConfinementCarrier DynamicsHot Carrier DynamicsLuminescence LifetimePhotocarrier DynamicsPhotoluminescenceTwo-dimensional Electron SystemsUltrafast Carrier Dynamics
We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Extrinsic photoluminescence from GaAs quantum wells
Robert C. Miller, A. C. Gossard, W. T. Tsang et al. · Physical review. B, Condensed matter · 1982 · 278 citations