Resonance raman scattering in group Vb semimetals: As, Sb, and Bi

Abstract

Abstract The dependence of the Raman scattering cross section of As, Sb, and Bi on the energy of the exciting laser was measured in the region from 1.6 to 2.7 eV. The shape of the resonance curve agrees reasonably well with the squared magnitude of the derivative of the dielectric constant with respect to frequency. Discrepancies are only seen at low frequencies for Sb and As. They are attributed to variations of the electron‐phonon interaction through the Brillouin zone. From these measurements, relative values of several average electron–phonon interaction constants are derived.