Semiconductors · 2013 · 14 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsP-n JunctionsPhotovoltaic DevicesSolar Cell MaterialsSolar CellsAntimonide SemiconductorsDoping EffectsEnergy Conversion EfficiencyP-n Junction Solar CellsPhotocurrent GenerationPhotovoltaic EfficiencySolar Cell Device PhysicsSolar Cell Fabrication
High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the p + diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the p-n-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm−2 have been determined.
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GaSb booster cells for over 30% efficient solar-cell stacks
Lewis M. Fraas, Gerald R. Girard, J. E. Avery et al. · Journal of Applied Physics · 1989 · 139 citations
Solar cells based on gallium antimonide
V. M. Andreev, S. V. Sorokina, N. Kh. Timoshina et al. · Semiconductors · 2009 · 36 citations
Thermophotovoltaic generators based on gallium antimonide
S. V. Sorokina, A. V. Malievskaya, A. S. Vlasov et al. · Semiconductors · 2010 · 22 citations