Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique

Defect recognition and image processing in III-V compounds

D.C. Look · Materials Research Bulletin · 1986 · 95 citations

Natural Sciences, Materials Engineering, Materials Science +16

The growth of Si single crystals from the melt and impurity incorporation mechanisms

Takao Abé · Journal of Crystal Growth · 1974 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +14

A possible mechanism of crystal growth from the melt and its application to the problem of anomalous segregation at crystal facets

A. Trainor, B.E. Bartlett · Solid-State Electronics · 1961 · 65 citations

Natural Sciences, Materials Science, Physics +14

Impurity Distributions in Single Crystals

Kenji Morizane, A. F. Witt, H. C. Gatos · Journal of The Electrochemical Society · 1966 · 49 citations

Natural Sciences, Materials Science, Crystal Structure +13

Application of Interface Demarcation to the Study of Facet Growth and Segregation: Germanium

A. F. Witt, M. Lichtensteiger, H. C. Gatos · Journal of The Electrochemical Society · 1974 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +17