Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique - Concepedia

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Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique

16

Citations

8

References

1990

Year

T.P. Chen, Yutong Guo, T.S. Huang, L.J. Chen

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsSi-doped Gaas CrystalsHorizontal Bridgman TechniqueSemiconductor Device FabricationOptoelectronicsCompound SemiconductorSemiconductor Device

References

	Year	Citations

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