Specific Heat Capacity of Gallium Nitride

Abstract

The specific heat capacity of gallium nitride (GaN) was measured for polycrystalline powder and single crystal samples. We present the temperature dependence of the specific heat capacity for single crystal and powdered GaN from 100 to 1300 K. The difference between the polycrystalline powder and single crystal arises from thermal evaporation in the high-temperature region, and this depends on the degree of heat transfer at 100–200 K. The temperature dependence of the specific heat capacity in the form c p = 7.1380 ×10 -17 T 6 - 2.9836 ×10 -13 T 5 + 4.2185 ×10 -10 T 4 - 1.5068 ×10 -7 T 3 - 1.6713 ×10 -4 T 2 + 0.1774 T - 1.3545 (J mol -1 K -1 ) was derived from a least squares fitting routine.