Compensation of Radiation Effects by Charge Transport in Metal-Nitride-Oxide-Semiconductor Structures

Abstract

We consider the effects of ionizing radiation on complementary metal-nitride-oxide-silicon (CMNOS) structures for oxide thicknesses in the range 20–50 Å. The bidirectional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of preirradiation threshold-voltage levels by carrier transport through the thin oxide is shown experimentally.