British Journal of Applied Physics · 1966 · 43 citations · 8 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCrystal ChemistryMetal OxidesOptical Properties Of SolidsOxide SemiconductorsRare-earth-doped MaterialsDoping Effects On Electrical PropertiesEffective MassElectrical PropertiesOxide DopingOxide Electronic StructureSeebeck CoefficientSeebeck EffectSingle-crystal Oxide Semiconductors
Single crystals of stannic oxide heavily doped with antimony have been grown from tin vapour and oxygen at 1450°c. Their electrical properties have been studied between 77 and 1100°K. These can be interpreted in terms of optical mode lattice scattering at the higher temperatures, with an impurity scattering contribution below about 300°K. Combining the Hall and Seebeck coefficients leads to an average electron effective mass of 0·13 m0.
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