Physical review. B, Condensed matter · 1997 · 13 citations · 7 references
Categoryquantum ElectronicsEngineeringSemiconductor NanostructuresSemiconductorsLuminescence SpectraIi-vi SemiconductorQuantum MaterialsQuantum MatterMaterials ScienceQuantum SciencePhotoluminescencePhysicsCrystalline DefectsTopological HeterostructuresSolid-state PhysicFermi-edge SingularityNatural SciencesApplied PhysicsCondensed Matter PhysicsFermi EdgeQuantum DevicesCorrelation EnhancementOptoelectronics
The occurrence of correlation enhancement at the Fermi edge is demonstrated in the luminescence spectra of modulation-doped ${\mathrm{Zn}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Cd}}_{\mathrm{x}}$Se/ZnSe quantum wells. The Fermi-edge singularity (FES) is observed at low temperature and is rapidly quenched with increasing temperature. A line-shape analysis reveals that recombination involves momentum-nonconserving transitions between electrons and localized holes. The temperature increase causes thermal activation of the trapped carriers and the consequent recovery of the momentum-conserving recombination. Many-body analysis of the FES line-shape indicates a characteristic localization length of about 14 nm for the holes, which we associate with compositional fluctuations in the ternary alloy quantum wells.
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Optical processes of 2D electron plasma in GaAs-(AlGa)As heterostructures
A. Pinczuk, Jagdeep Shah, Robert C. Miller et al. · Solid State Communications · 1984 · 160 citations