Electronics Letters · 1976 · 21 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsFiber-optic CommunicationLight-emitting DiodesOptical Properties Of SemiconductorsP-n JunctionsSemiconductor Device MaterialsWide Band Gap SemiconductorsGallium ArsenideIndium Gallium ArsenideOptical Communication LinksP-n Junction Characteristics
High-radiance GaAs l.e.d.s with 3 dB modulation bandwidths exceeding 500 MHz have been fabricated from p-n junction layers prepared with very high zinc acceptor doping levels. This development will permit the use of l.e.d.s in near-gigahertz or gigabit/s optical-fibre communication links.