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Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN
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Citations
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References
1997
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsOptical PropertiesNanoelectronicsElectron-longitudinal Optical PhononApplied PhysicsDirect MeasurementsPhononAluminum Gallium NitrideGan Power DeviceWurtzite GanCategoryiii-v SemiconductorOptoelectronicsLarger Ionicity
Electron-longitudinal optical phonon scattering rates in wurtzite GaN have been directly measured by subpicosecond time-resolved Raman spectroscopy. We find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
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