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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringConventional Post-implantation AnnealingApplied PhysicsSemiconductor Device FabricationTemperatures ≥1700°CMicroelectronicsCarbideSemiconductor Device