Anindya Nath

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Yuhao Zhang, Zhihong Liu, Marko J. Tadjer et al. · IEEE Electron Device Letters · 2017 · 175 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Vertical GaN Junction Barrier Schottky Diodes

Andrew D. Koehler, Travis J. Anderson, Marko J. Tadjer et al. · ECS Journal of Solid State Science and Technology · 2016 · 45 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

Kevin M. Daniels, Mohsen Jadidi, A. B. Sushkov et al. · 2D Materials · 2017 · 43 citations

Thz Photonics, Narrow Plasmon Resonances, Terahertz Technology +22

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Anindya Nath, Andrew D. Koehler, Glenn G. Jernigan et al. · Applied Physics Letters · 2014 · 33 citations

Graphene Electronic Devices, Engineering, Improved Lithographic Process +21

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer et al. · Applied Physics Express · 2017 · 33 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13