Anindya Nath - Concepedia

Author

Anindya Nath

United States Naval Research Laboratory ORCID

Also Known As

A Nath, A. Nath, Adithya R. Nath, Anindya Nath, Aswini Kumar Nath, Nath, A., Nath, Anindya

Publications

740

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory George Mason University University of Maryland, College Park Sotera Defense Solutions (United States)Institute for Microelectronics and Microsystems

About

Anindya Nath is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	585
2	Applied Physics	14	16	565
3	Chemical Engineering	2	2	37
4	Natural Sciences	1	1	43
5	Biomedical Engineering	1	1	43

Anindya Nath

Publications

639

Citations

H-Index

Page 1

	Year	Citations
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2017	175
Vertical GaN Junction Barrier Schottky Diodes Andrew D. Koehler, Travis J. Anderson, Marko J. Tadjer, ECS Journal of Solid State Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2016	45
Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene Kevin M. Daniels, Mohsen Jadidi, A. B. Sushkov, 2D Materials Thz PhotonicsNarrow Plasmon ResonancesTerahertz TechnologyEngineeringMetamaterials	2017	43
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process Anindya Nath, Andrew D. Koehler, Glenn G. Jernigan, Applied Physics Letters Graphene Electronic DevicesEngineeringImproved Lithographic ProcessGraphene NanomeshesGraphene-based Nano-antennas	2014	33
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer, Applied Physics Express SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2017	33
Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC Roberta Nipoti, Anindya Nath, Mulpuri V. Rao, Applied Physics Express Materials ScienceAluminium NitrideElectrical EngineeringIon ImplantationEngineering	2011	32
Ultra-broadband photodetectors based on epitaxial graphene quantum dots A. El Fatimy, Anindya Nath, Byoung Don Kong, Nanophotonics Electrical ResistanceQuantum ScienceElectrical EngineeringElectronic DevicesEngineering	2018	31
Functionalized graphene as a model system for the two-dimensional metal-insulator transition M. S. Osofsky, Sandra C. Hernández, Anindya Nath, Scientific Reports	2016	31
High Voltage GaN Lateral Photoconductive Semiconductor Switches Andrew D. Koehler, Travis J. Anderson, Ani Khachatrian, ECS Journal of Solid State Science and Technology SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesOptical Materials	2017	25
Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN Caroline R. English, Virginia D. Wheeler, N. Y. Garces, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorThermal GaoxEngineeringSurface TreatmentsNitrogen-polar Gan Surfaces	2013	24

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