Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy - Concepedia

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Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy

37

Citations

8

References

2000

Year

Song‐Bek Che, Ichirou Nomura, Wataru Shinozaki, Akihiko Kikuchi, Kazuhiko Shimomura, Katsumi Kishino

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringInp SubstratesApplied PhysicsGallium OxideMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsWide BandgapCompound Semiconductor

References

	Year	Citations

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