Ichirou Nomura

Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers

Katsumi Kishino, Akihiko Kikuchi, Y. Kaneko et al. · Applied Physics Letters · 1991 · 82 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

A 10‐in. surface‐conduction electron‐emitter display

Eiichi Yamaguchi, K Sakai, Ichirou Nomura et al. · Journal of the Society for Information Display · 1997 · 63 citations

Engineering, Electron-beam Lithography, Electronic Devices +16

600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy

Ichirou Nomura, Katsumi Kishino, Akihiko Kikuchi Akihiko Kikuchi et al. · Japanese Journal of Applied Physics · 1994 · 63 citations

Photonics, Laser Wafers, Engineering +13

71.2: Fabrication and Characterization of Surface Conduction Electron Emitters

Keisuke Yamamoto, Ichirou Nomura, Koji Yamazaki et al. · SID Symposium Digest of Technical Papers · 2005 · 52 citations

Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy

Song‐Bek Che, Ichirou Nomura, Wataru Shinozaki et al. · Journal of Crystal Growth · 2000 · 37 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8