Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm - Concepedia

Concepedia

Publication | Open Access

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm

DOI Full Paper Access

12

Citations

27

References

2014

Year

Mohammad Najmzadeh, Matthieu Berthomé, Jean-Michel Sallèse, Wladek Grabinski, Adrian M. Ionescu

Solid-State Electronics

Electrical EngineeringElectron Mobility ExtractionEngineeringNanotechnologyElectronic EngineeringNanoelectronicsApplied PhysicsMicroelectronicsCross-section DownSemiconductor Device

References

	Year	Citations

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